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The SIS-Concept stands for Semiconductor - Insulator - Semiconductor. This concept has a simple build-up of coats, that uses a siliconwafer (Semiconductor) as a substrate. 

To implement a semiconductor-insulator-semiconductor system, a thin film of an insulating material is deposited on silicon, followed by overcoating with a transparent conductive oxide (TCO), for which indium tin oxide or aluminum-doped zinc oxide can be used. The combination of nanostructured silicon interfaces and low-cost SIS systems creates an innovative solar cell concept with the potential of high efficiency at low production costs.

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Using Sputterdeposition for Production

We use dc magnetron sputtering for the deposition of thin ITO films on p-doped unstructured and ICP-structured silicon substrates.

Due to the undirected particle flux of the sputtered particles, the sputtering process leads to the formation of ITO clusters at the front of the silicon needles. If the film thickness increases, the clusters get into contact and build a more or less dense film.


The entire cellprocessing can be done with one installation. Addional chemicals and high temperatures within the diffusion process for the pn-transition not applicable.


Startseite UNI Jena

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